Si1000/1/2/3/4/5
Table 4.9. ADC0 Electrical Characteristics
V
= 1.8 to 3.6V V, VREF = 1.65 V (REFSL[1:0] = 11), –40 to +85 °C unless otherwise specified.
DD
Parameter
Conditions
Min
Typ
Max
Units
DC Accuracy
Resolution
10
bits
LSB
LSB
LSB
LSB
Integral Nonlinearity
Differential Nonlinearity
Offset Error
—
—
—
—
±0.5
±0.5
±<1
±1
±1
±1
Guaranteed Monotonic
±2
Full Scale Error
±2.5
Dynamic performance (10 kHz sine-wave single-ended input, 1 dB below Full Scale, 300 ksps)
Signal-to-Noise Plus Distortion
Signal-to-Distortion
54
—
—
58
73
75
—
—
—
dB
dB
dB
Spurious-Free Dynamic Range
Conversion Rate
SAR Conversion Clock
—
—
7.33
MHz
Conversion Time in SAR Clocks
10-bit Mode
8-bit Mode
13
11
—
—
—
—
clocks
Track/Hold Acquisition Time
Throughput Rate
1.5
—
—
—
—
us
300
ksps
Analog Inputs
ADC Input Voltage Range
Single Ended (AIN+ – GND)
Single Ended
0
0
—
—
VREF
V
V
Absolute Pin Voltage with respect
to GND
V
DD
Sampling Capacitance
1x Gain
0.5x Gain
—
—
30
28
—
pF
Input Multiplexer Impedance
Power Specifications
Power Supply Current
5
—
k
Conversion Mode (300 ksps)
Tracking Mode (0 ksps)
—
—
800
680
—
—
µA
dB
(V supplied to ADC0)
DD
Power Supply Rejection
Internal High Speed VREF
External VREF
—
—
67
74
—
—
60
Rev. 1.0
SILICON [ SILICON ]
