Si1000/1/2/3/4/5
Table 4.13. Comparator Electrical Characteristics
VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise noted.
Parameter
Response Time:
Conditions
Min
—
Typ
130
200
210
410
420
1200
1750
6200
1.5
Max
—
—
—
—
—
—
—
—
4
Units
ns
CP0+ – CP0– = 100 mV
CP0+ – CP0– = –100 mV
CP0+ – CP0– = 100 mV
CP0+ – CP0– = –100 mV
CP0+ – CP0– = 100 mV
CP0+ – CP0– = –100 mV
CP0+ – CP0– = 100 mV
CP0+ – CP0– = –100 mV
*
*
*
*
Mode 0, V = 2.4 V, V
= 1.2 V
= 1.2 V
= 1.2 V
= 1.2 V
DD
CM
CM
CM
CM
—
ns
Response Time:
—
ns
Mode 1, V = 2.4 V, V
DD
—
ns
Response Time:
—
ns
Mode 2, V = 2.4 V, V
DD
—
ns
Response Time:
—
ns
Mode 3, V = 2.4 V, V
DD
—
ns
Common-Mode Rejection Ratio
—
mV/V
V
Inverting or Non-Inverting Input
Voltage Range
–0.25
—
V
+ 0.25
DD
Input Capacitance
Input Bias Current
Input Offset Voltage
Power Supply
—
—
–7
12
1
—
—
+7
pF
nA
—
mV
Power Supply Rejection
Power-up Time
—
—
—
—
—
—
—
—
—
0.1
0.6
1.0
1.8
10
—
—
—
—
—
—
—
—
—
mV/V
µs
VDD = 3.6 V
VDD = 3.0 V
VDD = 2.4 V
VDD = 1.8 V
Mode 0
µs
µs
µs
Supply Current at DC
23
µA
µA
µA
µA
Mode 1
8.8
2.6
0.4
Mode 2
Mode 3
Note: Vcm is the common-mode voltage on CP0+ and CP0–.
Rev. 1.0
63
SILICON [ SILICON ]
