Si1000/1/2/3/4/5
Table 4.7. Internal Precision Oscillator Electrical Characteristics
VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Units
–40 to +85 °C,
Oscillator Frequency
24
24.5
25
MHz
V
= 1.8–3.6 V
DD
Oscillator Supply Current
25 °C; includes bias current
of 90–100 µA
—
300*
—
µA
(from V
)
DD
*Note: Does not include clock divider or clock tree supply current.
Table 4.8. Internal Low-Power Oscillator Electrical Characteristics
VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Units
–40 to +85 °C,
Oscillator Frequency
18
20
22
MHz
V
= 1.8–3.6 V
DD
25 °C
Oscillator Supply Current
—
100*
—
µA
No separate bias current
required.
(from V
)
DD
*Note: Does not include clock divider or clock tree supply current.
Rev. 1.0
59
SILICON [ SILICON ]
