Si1000/1/2/3/4/5
Table 4.14. DC-DC Converter (DC0) Electrical Characteristics
VBAT = 0.9 to 1.8 V, –40 to +85 °C unless otherwise specified.
Parameter
Input Voltage Range
Input Inductor Value
Conditions
Min
0.9
Typ
—
Max
1.8
Units
V
500
680
900
nH
Input Inductor Current
Rating
250
—
—
—
—
mA
Inductor DC Resistance
Input Capacitor Value
Output Voltage Range
0.5
—
—
4.7
1.0
—
—
µF
Source Impedance < 2
Target Output = 1.8 V
Target Output = 1.9 V
Target Output = 2.0 V
Target Output = 2.1 V
Target Output = 2.1 V
Target Output = 2.7 V
Target Output = 3.0 V
Target Output = 3.3 V
Target Output = 2.0 V, 1 to 30 mA
Target Output = 3.0 V, 1 to 20 mA
Target Output = 1.8 V
Target Output = 1.9 V
Target Output = 2.0 V
Target Output = 2.1 V
Target Output = 2.4 V
Target Output = 2.7 V
Target Output = 3.0 V
Target Output = 3.3 V
1.73
1.83
1.93
2.03
2.30
2.60
2.90
3.18
—
1.80
1.90
2.00
2.10
2.40
2.70
3.00
3.30
±0.3
±1
1.87
1.97
2.07
2.17
2.50
2.80
3.10
3.42
—
V
V
V
V
V
V
V
V
Output Load Regulation
%
—
—
%
Output Current
(based on output power
spec)
—
—
36
mA
mA
mA
mA
mA
mA
mA
mA
mW
—
—
34
—
—
32
—
—
30
—
—
27
—
—
24
—
—
21
—
—
19
Output Power
—
—
65
from VBAT supply
from VDD/DC+ supply
—
—
80
100
—
—
Bias Current
µA
MHz
mA
Clocking Frequency
1.6
2.4
3.2
Maximum DC Load Current
During Startup
—
—
1
Capacitance Connected to
Output
0.8
1.0
2.0
µF
Table 4.15. VREG0 Electrical Characteristics
VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min
Typ
Max
Units
Input Voltage Range
Bias Current
1.8
—
—
3.6
—
V
Normal, Idle, Suspend, or Stop Mode
20
µA
Rev. 1.0
65
SILICON [ SILICON ]
