LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
AC Characteristics for CE» - Controlled Command Write Operations1
T = 0°C to +70°C
A
VCC = 3.3 V ±0.3 V
SYMBOL
PARAMETER
UNITS
NOTE
TYP.
MIN.
120
480
100
0
MAX.
tAVAV
tPHWL
tVPEH
tWLEL
tAVEH
tDVEH
tELEH
tEHDX
tEHAX
tEHWH
tEHEL
tGHEL
tEHRL
Write Cycle Time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
RP» Setup to WE Going Low
VPP Setup to CE» Going High
WE Setup to CE» Going Low
Address Setup to CE» Going High
Data Setup to CE» Going High
CE» Pulse Width
3
3
75
2, 6
2, 6
75
75
Data Hold from CE» High
Address Hold from CE» High
WE Hold from CE» High
10
2
2
10
10
CE» Pulse Width High
45
Read Recovery before Write
CE» High to RY/» BY» Going Low
0
100
RP» Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY/» BY» High
tRHPL
0
ns
3
tPHEL
tEHGL
RP» High Recovery to CE» Going Low
1
µs
ns
Write Recovery before Read
95
VPP Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY/» BY» High
tQVVL
0
µs
1
tEHQV
Duration of Word/Byte Write Operation
Duration of Block Erase Operation
12
5
µs
s
4, 5
4
2
tEHQV
0.3
32
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