LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
1
AC Characteristics for WE
»
- Controlled Command Write Operations (Continued)
T = 0°C to +70°C
A
VCC = 5.0 ± 0.25 V
VCC = 5.0 ± 0.5 V
SYMBOL
PARAMETER
UNITS
NOTE
TYP. MIN. MAX. TYP. MIN. MAX.
tAVAV
tVPWH
tPHEL
Write Cycle Time
70
100
480
0
80
100
480
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
VPP Setup to WE Going High
RP» Setup to CE» Going Low
CE» Setup to WE Going Low
Address Setup to WE Going High
Data Setup to WE Going High
WE Pulse Width
3
tELWL
tAVWH
tDVWH
tWLWH
tWHDX
tWHAX
tWHEH
tWHWL
tGHWL
tWHRL
50
50
40
0
50
50
50
0
2, 6
2, 6
Data Hold from WE High
Address Hold from WE High
CE» Hold from WE High
2
2
10
10
30
0
10
10
30
0
WE Pulse Width High
Read Recovery before Write
WE High to RY/» BY» Going Low
100
100
RP» Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY/» BY» High
tRHPL
0
0
ns
3
tPHWL
tWHGL
RP» High Recovery to WE Going Low
1
1
µs
ns
Write Recovery before Read
60
65
VPP Hold from Valid Status Register (CSR,
GSR, BSR) Data and RY/» BY» High
tQVVL
0
0
µs
1
tWHQV
Duration of Word/Byte Write Operation
Duration of Block Erase Operation
8
4.5
0.3
8
4.5
0.3
µs
s
4, 5
4
2
tWHQV
NOTES:
CE» is defined as the latter of CE»0 or CE» going Low or the first of CE»0 or CE»1 going High.
1
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Word/Byte write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of CE» for all Command Write Operations.
30
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
