LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
tWHEH
CEX (E)
tELWL
WE (W)
tAVWL
tWLWH
tWHWL
tWHAX
ADDRESSES (A)
DATA (D/Q)
VALID
tDVWH
tWHDX
HIGH-Z
DIN
28F800SUR-15
Figuer 17. Page Buffer Write Timing Waveforms
Erase and Word/Byte Write Performance
V
= 3.3 V ± 0.3 V, T = 0°C to +70°C
A
CC
(1)
SYMBOL
PARAMETER
Word/Byte Write Time
Block Write Time
TYP.
MIN.
MAX. UNITS
TEST CONDITIONS
NOTE
1
tWHRH
12
µs
2
2
2
2
2
2
tWHRH
0.8
0.4
2.1
1.0
10
s
s
s
s
Byte Write Mode
3
tWHRH
Block Write Time
Word Write Mode
Block Erase Time
Full Chip Erase Time
0.9
14.4
V
= 5.0 V ± 0.5 V, T = 0°C to +70°C
A
CC
(1)
SYMBOL
PARAMETER
Word/Byte Write Time
Block Write Time
TYP.
MIN.
MAX. UNITS
TEST CONDITIONS
NOTE
1
tWHRH
8
µs
2
2
2
2
2
2
tWHRH
0.54
0.27
0.7
2.1
1.0
10
s
s
s
s
Byte Write Mode
Word Write Mode
3
tWHRH
Block Write Time
Block Erase Time
Full Chip Erase Time
11.2
NOTES:
1. 25°C, V = 5.0 V.
PP
2. Excludes System-Level Overhead.
36
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
