8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
AC Characteristics for WE
»
- Controlled Command Write Operations1
T = 0°C to +70°C
A
VCC = 3.3 ± 0.3 V
SYMBOL
PARAMETER
TYP.
NOTE
MIN.
120
100
480
10
MAX.
UNITS
ns
tAVAV
tVPWH
tPHEL
Write Cycle Time
VPP Setup to WE Going High
RP» Setup to CE» Going Low
CE» Setup to WE Going Low
Address Setup to WE Going High
Data Setup to WE Going High
WE Pulse Width
ns
3
ns
tELWL
tAVWH
tDVWH
tWLWH
tWHDX
tWHAX
tWHEH
tWHWL
tGHWL
tWHRL
ns
75
ns
2, 6
2, 6
75
ns
75
ns
Data Hold from WE High
10
ns
2
2
Address Hold from WE High
10
ns
CE Hold from WE High
»
10
ns
WE Pulse Width High
Read Recovery before Write
WE High to RY/» BY» Going Low
45
ns
0
ns
100
ns
RP» Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY/» BY» High
tRHPL
0
ns
3
tPHWL
tWHGL
1
µs
ns
RP» High Recovery to WE Going Low
Write Recovery before Read
95
VPP Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY/» BY» High
tQVVL
0
µs
1
tWHQV
Duration of Word/Byte Write Operation
Duration of Block Erase Operation
12
5
µs
s
4, 5
4
2
tWHQV
0.3
29
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