LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
SYMBOL
PARAMETER
RP» Low to 3/5» Low (High)
MIN.
MAX.
UNIT
NOTE
tPLYL
tPLYH
0
µs
tYLPH
tYHPH
3/5» Low (High) to RP» High
2
0
µs
µs
1
2
tPL5V
tPL3V
RP» Low to VCC at 4.5 V MIN.
(to VCC at 3.0 V min or 3.6 V MAX.)
tPLPH
t5VPH
t3VPH
tAVQV
tPHQV
RP» 'Low'
100
100
100
ns
ns
ns
ns
ns
VCC at 4.5 V to RP» High
3
3
4
4
VCC at 3.0 V to RP» High
Address Valid to Data Valid for VCC = 5 V ± 10%
RP» High to Data Valid for VCC = 5 V ± 10%
100
480
NOTES:
CE»0, CE»1 and OE
1. Minimum of 2 µs is required to meet the specified t
»
are switched low after Power-Up.
times.
PHQV
2. The power supply may start to switch concurrently with RP» going Low. RP» is required to stay low, until V stays at recommended
CC
operating voltage.
3. The address access time and RP» high to data valid time are shown for 5 V V
operation. Refer to the AC Characteristics Read Only
CC
Operations 3.3 V V operation and all other speed options.
CC
28
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
