8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
AC Characteristics for Page Buffer Write Operations1
T = 0°C to +70°C
A
VCC = 3.3 V ± 0.3 V
SYMBOL
PARAMETER
UNITS
NOTE
TYP.
MIN.
120
10
MAX.
tAVAV
tELWL
tAVWL
tDVWH
tWLWH
tWHDX
tWHAX
tWHEH
tWHWL
tGHWL
tWHGL
Write Cycle Time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CE» Setup to WE Going Low
Address Setup to WE Going Low
Data Setup to WE Going High
WE Pulse Width
3
2
0
75
75
10
2
2
Data Hold from WE High
Address Hold from WE High
CE» Hold from WE High
10
10
45
0
WE Pulse Width High
Read Recovery before Write
Write Recovery before Read
95
VCC = 5.0 V ± 0.25 V
VCC = 5.0 V ± 0.5 V
SYMBOL
PARAMETER
UNITS NOTE
TYP.
MIN.
70
0
MAX.
TYP.
MIN.
80
0
MAX.
tAVAV
tELWL
Write Cycle Time
ns
ns
CE» Setup to WE Going Low
Address Setup to WE Going Low
Data Setup to WE Going High
WE Pulse Width
tAVWL
0
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
2
tDVWH
tWLWH
tWHDX
tWHAX
tWHEH
tWHWL
tGHWL
tWHGL
NOTES:
50
40
0
50
50
0
Data Hold from WE High
Address Hold from WE High
CE» Hold from WE High
WE Pulse Width High
2
2
10
10
30
0
10
10
30
0
Read Recovery before Write
Write Recovery before Read
60
65
CE» is defined as the latter of CE»0 or CE» going Low or the first of CE»0 or CE»1 going High.
1
1. These are WE» controlled write timings, equivalent CE» controlled write timings apply.
2. Sampled, but not 100% tested.
3. Address must be valid during the entire WE» Low pulse.
35
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
