256MB, 512MB, 1GB Unbuffered DIMMs
DDR2 SDRAM
Operating Current Table(1-1) (TA=0oC, VDD= 1.9V)
M378T6553BG(Z)3 / M378T6553BG(Z)0 : 512MB(64Mx8 *8) Module
D5
CC
Symbol
Unit
Notes
(DDR2-533@CL=4)
(DDR2-400@CL=3)
IDD0
IDD1
800
760
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
880
800
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
64
64
200
200
240
240
240
240
120
120
560
520
1,600
1,440
1,560
44
1,160
1,160
1,480
44
IDD6
Normal
IDD7
2,200
2,160
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M378T2953BG(Z)3 / M378T2953BG(Z)0 : 1GB(64Mx8 *16) Module
D5
CC
Symbol
Unit
Notes
(DDR2-533@CL=4)
(DDR2-400@CL=3)
IDD0
IDD1
1,360
1,440
128
1,280
1,320
128
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
400
400
480
480
480
480
240
240
1,120
2,160
2,000
2,120
88
1,040
1,680
1,680
2,000
88
IDD6
Normal
IDD7
2,760
2,680
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.5 Aug. 2005
SAMSUNG [ SAMSUNG ]
