256MB, 512MB, 1GB Unbuffered DIMMs
DDR2 SDRAM
Operating Current Table(1-2) (TA=0oC, VDD= 1.9V)
M378T3354BG(Z)3 / M378T3354BG(Z)0 : 256MB(32Mx16 *4) Module
D5
CC
Symbol
Unit
Notes
(DDR2-533@CL=4)
(DDR2-400@CL=3)
IDD0
IDD1
480
580
32
460
500
32
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
100
120
120
60
100
120
120
60
280
920
820
780
22
260
740
680
740
22
IDD6
Normal
IDD7
1,560
1,500
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M391T6553BG(Z)3 / M391T6553BG(Z)0 : 512MB(64Mx8 *9) ECC Module
D5
CC
Symbol
Unit
Notes
(DDR2-533@CL=4)
(DDR2-400@CL=3)
IDD0
IDD1
900
855
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
990
900
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
72
72
225
225
270
270
270
270
135
135
630
585
1,800
1,620
1,755
50
1,305
1,305
1,665
50
IDD6
Normal
IDD7
2,475
2,430
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.5 Aug. 2005
SAMSUNG [ SAMSUNG ]
