OneNAND512Mb(KFG1216U2B-xIB6)
FLASH MEMORY
3.9.1 Copy-Back Program Operation with Random Data Input
The Copy-Back Program Operation with Random Data Input in OneNAND consists of 2 phase, Load data into DataRAM, Modify data
and program into designated page. Data from the source page is saved in one of the on-chip DataRAM buffers and modified by the
host, then programmed into the destination page.
As shown in the flow chart, data modification is possible upon completion of load operation. ECC is also available at the end of load
operation. Therefore, using hardware ECC of OneNAND, accumulation of 1 bit error can be avoided.
Copy-Back Program Operation with Random Data Input will be effectively utilized at modifying certain bit, byte, word, or sector of
source page to destination page while it is being copied.
Copy-Back Program Operation with Random Data Input Flow Chart
Start
NO
DQ[10]=0?
YES
Map Out
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Random Data Input
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Add: Random Address in
Selected DataRAM
DQ=Data
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write 0 to interrupt register1)
Add: F241h DQ=0000h
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’Load’ Command
Write 0 to interrupt register1)
Add: F241h DQ=0000h
Add: F220h
DQ=0000h or 0013h
Write ’Program’ Command
Wait for INT register
low to high transition
Add: F220h
DQ=0080h or 001Ah
Add: F241h DQ[15]=INT
Wait for INT register
low to high transition
Read Controller
Status Register
Add: F241h DQ[15]=INT
Add: F240h DQ[10]=Error
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0?
Note 1) ’Write 0 to interrupt register’ step
may be ignored when using INT auto mode.
Refer to chapter 2.8.18.1
YES
NO
Copy back Error
Copy back completed
73
SAMSUNG [ SAMSUNG ]
