OneNAND512Mb(KFG1216U2B-xIB6)
FLASH MEMORY
Program Operation Flow Diagram
Write 0 to interrupt register2)
Start
Add: F241h DQ=0000h
Write Data into DataRAM1)
ADD: DP DQ=Data-in
Write ’Program’ Command
Add: F220h
DQ=0080h or 001Ah
NO
Data Input
Completed?
Wait for INT register
low to high transition
YES
Add: F241h DQ[15]=INT
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Read Interrupt register
Add: F241h DQ[6]=WI
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Read Controller
Status Register ‘Lock’ bit high
NO
DQ[6]=1?
YES
Add: F240h DQ[14]=Lock
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Read Controller
Status Register
Add: F240h DQ[10]=Error
Program Lock Error
DQ[10]=0?
YES
NO
Program completed
Program Error
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
Note 1) Data input could be done anywhere between "Start" and "Write Program Command".
2) ’Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
During the execution of the Internal Program Routine, the host is not required to provide any further controls or timings. Furthermore,
all commands, except a Reset command, will be ignored. A reset during a program operation will cause data corruption at the corre-
sponding location.
If a program error is detected at the completion of the Internal Program Routine, map out the block, including the page in error, and
copy the target data to another block. An error is signaled if DQ10 = "1" of Controller Status Register(F240h) .
Data input from the Host to the DataRAM can be done at any time during the Internal Program Routine after "Start" but before the
"Write Program Command" is written.
70
SAMSUNG [ SAMSUNG ]
