K9W4G08U1M
K9K2G08Q0M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
FLASH MEMORY
Program / Erase Characteristics
Parameter
Sym-
tPROG
tCBSY
Min
Typ
Max
700
700
4
Unit
µs
Program Time
-
300
Dummy Busy Time for Cache Program
3
-
µs
Main Array
Spare Array
-
-
-
cycles
cycles
ms
Number of Partial Program Cycles
in the Same Page
Nop
-
4
Block Erase Time
tBERS
2
3
NOTE : 1. Max. time of tCBSY depends on timing between internal program completion and data in
AC Timing Characteristics for Command / Address / Data Input
Min
Max
Parameter
Symbol
Unit
K9K2GXXQ0M
K9K2GXXU0M
K9K2GXXQ0M
K9K2GXXU0M
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
tCLS
tCLH
tCS
0
0
10
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
0
tCH
10
60
0
10
25(1)
0
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
tWP
tALS
tALH
tDS
10
20
10
80
20
10
20
10
45
15
tDH
tWC
tWH
NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
Min
Min
Max
Max
Parameter
Symbol
Unit
K9K2GXXQ0M
K9K2GXXU0M
K9K2GXXQ0M
K9K2GXXU0M
Data Transfer from Cell to Register
ALE to RE Delay
tR
tAR
-
10
10
20
60
-
-
10
10
20
25
-
25
25
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
-
-
CLE to RE Delay
tCLR
tRR
Ready to RE Low
-
-
RE Pulse Width
tRP
-
-
WE High to Busy
tWB
tRC
100
-
100
-
Read Cycle Time
80
-
50
-
RE Access Time
tREA
tCEA
tRHZ
tCHZ
tOH
60
75
30
20
-
30
45
30
20
-
CE Access Time
-
-
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
-
-
-
-
15
20
0
15
15
0
tREH
tIR
-
-
-
-
tWHR
60
60
-
-
Device Resetting Time
(Read/Program/Erase)
tRST
-
-
5/10/500(1)
5/10/500(1)
µs
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
14
SAMSUNG [ SAMSUNG ]
