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K9XXG16UXM-Y 参数 Datasheet PDF下载

K9XXG16UXM-Y图片预览
型号: K9XXG16UXM-Y
PDF下载: 下载PDF文件 查看货源
内容描述: 256M ×8位/ 128M x 16位NAND闪存 [256M x 8 Bit / 128M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 39 页 / 679 K
品牌: SAMSUNG [ SAMSUNG ]
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K9W4G08U1M  
K9K2G08Q0M  
K9K2G08U0M  
K9W4G16U1M  
K9K2G16Q0M  
K9K2G16U0M  
FLASH MEMORY  
System Interface Using CE don’t-care.  
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal  
2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system design  
gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE  
during the data-loading and serial access would provide significant savings in power consumption.  
Figure 4. Program Operation with CE don’t-care.  
CLE  
CE don’t-care  
CE  
WE  
ALE  
I/Ox  
80h  
Address(4Cycles)  
Data Input  
Data Input  
10h  
tCS  
tCH  
tCEA  
CE  
CE  
tREA  
tWP  
RE  
WE  
I/O0~7  
out  
Figure 5. Read Operation with CE don’t-care.  
CLE  
CE  
CE don’t-care  
RE  
ALE  
tR  
R/B  
WE  
I/Ox  
Data Output(serial access)  
00h  
Address(4Cycle)  
30h  
18  
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