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K9XXG16UXM-Y 参数 Datasheet PDF下载

K9XXG16UXM-Y图片预览
型号: K9XXG16UXM-Y
PDF下载: 下载PDF文件 查看货源
内容描述: 256M ×8位/ 128M x 16位NAND闪存 [256M x 8 Bit / 128M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 39 页 / 679 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K9XXG16UXM-Y的Datasheet PDF文件第8页浏览型号K9XXG16UXM-Y的Datasheet PDF文件第9页浏览型号K9XXG16UXM-Y的Datasheet PDF文件第10页浏览型号K9XXG16UXM-Y的Datasheet PDF文件第11页浏览型号K9XXG16UXM-Y的Datasheet PDF文件第13页浏览型号K9XXG16UXM-Y的Datasheet PDF文件第14页浏览型号K9XXG16UXM-Y的Datasheet PDF文件第15页浏览型号K9XXG16UXM-Y的Datasheet PDF文件第16页  
K9W4G08U1M  
K9K2G08Q0M  
K9K2G08U0M  
K9W4G16U1M  
K9K2G16Q0M  
K9K2G16U0M  
FLASH MEMORY  
ABSOLUTE MAXIMUM RATINGS  
Rating  
K9K2GXXQ0M(1.8V) K9XXGXXUXM(3.3V)  
Parameter  
Symbol  
Unit  
V
VIN/OUT  
VCC  
-0.6 to + 2.45  
-0.2 to + 2.45  
-0.6 to + 4.6  
-0.6 to + 4.6  
Voltage on any pin relative to VSS  
K9XXGXXXXM-XCB0  
Temperature Under Bias  
-10 to +125  
-40 to +125  
TBIAS  
°C  
K9XXGXXXXM-XIB0  
K9XXGXXXXM-XCB0  
Storage Temperature  
TSTG  
Ios  
-65 to +150  
5
°C  
K9XXGXXXXM-XIB0  
Short Circuit Current  
mA  
NOTE :  
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.  
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.  
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions  
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
RECOMMENDED OPERATING CONDITIONS  
(Voltage reference to GND, K9XXGXXXXM-XCB0 :TA=0 to 70°C, K9XXGXXXXM-XIB0:TA=-40 to 85°C)  
K9K2GXXQ0M(1.8V)  
K9XXGXXUXM(3.3V)  
Parameter  
Symbol  
Unit  
Min  
1.7  
0
Typ.  
1.8  
0
Max  
1.95  
0
Min  
2.7  
0
Typ.  
3.3  
0
Max  
3.6  
0
Supply Voltage  
Supply Voltage  
VCC  
VSS  
V
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)  
K9K2GXXQ0M(1.8V)  
K9XXGXXUXM(3.3V)  
Unit  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Min Typ  
Max  
Page Read with  
Serial Access  
tRC=50ns, CE=VIL  
IOUT=0mA  
Operat-  
ing  
ICC1  
-
10  
20  
-
15  
30  
Current Program  
ICC2  
ICC3  
ISB1  
-
-
-
-
10  
10  
-
20  
20  
1
-
-
-
15  
15  
-
30  
30  
1
mA  
Erase  
-
Stand-by Current(TTL)  
CE=VIH, WP=PRE=0V/VCC  
CE=VCC-0.2,  
Stand-by Current(CMOS)  
ISB2  
-
20  
100  
-
20  
100  
WP=PRE=0V/VCC  
µA  
Input Leakage Current  
Output Leakage Current  
ILI  
VIN=0 to Vcc(max)  
-
-
-
-
±20  
±20  
-
-
-
-
±20  
±20  
ILO  
VOUT=0 to Vcc(max)  
VCC+  
0.3  
Input High Voltage  
VIH*  
VIL*  
VOH  
-
-
VCC-0.4  
-0.3  
-
-
-
2.0  
-0.3  
2.4  
-
-
-
VCC+0.3  
Input Low Voltage, All inputs  
Output High Voltage Level  
Output Low Voltage Level  
0.4  
0.8  
-
V
K9K2GXXQ0M:IOH=-100µA  
K9XXGXXUXM:IOH=-400µA  
Vcc-0.1  
-
K9K2GXXQ0M :IOL=100uA  
K9XXGXXUXM :IOL=2.1mA  
VOL  
-
-
0.1  
-
-
-
0.4  
-
K9K2GXXQ0M :VOL=0.1V  
K9XXGXXUXM :VOL=0.4V  
Output Low Current(R/B)  
IOL(R/B)  
3
4
8
10  
mA  
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.  
12  
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