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K9XXG16UXM-Y 参数 Datasheet PDF下载

K9XXG16UXM-Y图片预览
型号: K9XXG16UXM-Y
PDF下载: 下载PDF文件 查看货源
内容描述: 256M ×8位/ 128M x 16位NAND闪存 [256M x 8 Bit / 128M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 39 页 / 679 K
品牌: SAMSUNG [ SAMSUNG ]
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K9W4G08U1M  
K9K2G08Q0M  
K9K2G08U0M  
K9W4G16U1M  
K9K2G16Q0M  
K9K2G16U0M  
FLASH MEMORY  
PIN DESCRIPTION  
Pin Name  
Pin Function  
DATA INPUTS/OUTPUTS  
I/O0 ~ I/O7  
(K9K2G08X0M)  
I/O0 ~ I/O15  
The I/O pins are used to input command, address and data, and to output data during read operations. The I/  
O pins float to high-z when the chip is deselected or when the outputs are disabled.  
I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 oper-  
ation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and  
output.  
(K9K2G16X0M)  
COMMAND LATCH ENABLE  
CLE  
ALE  
The CLE input controls the activating path for commands sent to the command register. When active high,  
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.  
ADDRESS LATCH ENABLE  
The ALE input controls the activating path for address to the internal address registers. Addresses are  
latched on the rising edge of WE with ALE high.  
CHIP ENABLE  
The CE / CE1 input is the device selection control. When the device is in the Busy state, CE / CE1 high is  
ignored, and the device does not return to standby mode in program or erase opertion. Regarding CE / CE1  
control during read operation, refer to ’Page read’ section of Device operation .  
CE / CE1  
CHIP ENABLE  
The CE2 input enables the second K9K2GXXU0M  
CE2  
RE  
READ ENABLE  
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid  
tREA after the falling edge of RE which also increments the internal column address counter by one.  
WRITE ENABLE  
WE  
WP  
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of  
the WE pulse.  
WRITE PROTECT  
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage  
generator is reset when the WP pin is active low.  
READY/BUSY OUTPUT  
The R/B / R/B1 output indicates the status of the device operation. When low, it indicates that a program,  
erase or random read operation is in process and returns to high state upon completion. It is an open drain  
output and does not float to high-z condition when the chip is deselected or when outputs are disabled.  
R/B / R/B1  
READY/BUSY OUTPUT  
The R/B2 output indicates the status of the second K9K2GXXU0M  
R/B2  
PRE  
POWER-ON READ ENABLE  
The PRE controls auto read operation executed during power-on. The power-on auto-read is enabled when  
PRE pin is tied to Vcc.  
POWER  
Vcc  
Vss  
N.C  
VCC is the power supply for device.  
GROUND  
NO CONNECTION  
Lead is not internally connected.  
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.  
Do not leave VCC or VSS disconnected.  
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