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K9K1208D0C 参数 Datasheet PDF下载

K9K1208D0C图片预览
型号: K9K1208D0C
PDF下载: 下载PDF文件 查看货源
内容描述: 64M ×8位, 32M x 16位NAND闪存 [64M x 8 Bit , 32M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 39 页 / 955 K
品牌: SAMSUNG [ SAMSUNG ]
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K9K1208Q0C  
K9K1208D0C  
K9K1208U0C  
K9K1216Q0C  
K9K1216D0C  
K9K1216U0C  
FLASH MEMORY  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Parameter  
Symbol  
Unit  
1.8V DEVICE  
-0.6 to + 2.45  
-0.2 to + 2.45  
-0.2 to + 2.45  
3.3V/2.65V DEVICE  
-0.6 to + 4.6  
VIN/OUT  
VCC  
Voltage on any pin relative to VSS  
V
-0.6 to + 4.6  
VCCQ  
-0.6 to + 4.6  
K9K12XXX0C-XCB0  
Temperature Under Bias  
-10 to +125  
TBIAS  
°C  
K9K12XXX0C-XIB0  
-40 to +125  
-65 to +150  
5
K9K12XXX0C-XCB0  
Storage Temperature  
TSTG  
Ios  
°C  
K9K12XXX0C-XIB0  
Short Circuit Current  
mA  
NOTE :  
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.  
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.  
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions  
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
RECOMMENDED OPERATING CONDITIONS  
(Voltage reference to GND, K9K12XXX0C-GCB0,JCB0 :TA=0 to 70°C, K9K12XXX0C-GIB0,JIB0:TA=-40 to 85°C)  
K9K12XXQ0C(1.8V)  
K9K12XXD0C(2.65V)  
K9K12XXU0C(3.3V)  
Parameter  
Symbol  
Unit  
Min  
Typ.  
1.8  
1.8  
0
Max  
Min  
2.4  
2.4  
0
Typ.  
2.65  
2.65  
0
Max  
2.9  
2.9  
0
Min  
Typ.  
3.3  
3.3  
0
Max  
Supply Voltage  
Supply Voltage  
Supply Voltage  
VCC  
VCCQ  
VSS  
1.70  
1.70  
0
1.95  
1.95  
0
2.7  
2.7  
0
3.6  
3.6  
0
V
V
V
9
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