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K9K1208D0C 参数 Datasheet PDF下载

K9K1208D0C图片预览
型号: K9K1208D0C
PDF下载: 下载PDF文件 查看货源
内容描述: 64M ×8位, 32M x 16位NAND闪存 [64M x 8 Bit , 32M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 39 页 / 955 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K9K1208D0C的Datasheet PDF文件第9页浏览型号K9K1208D0C的Datasheet PDF文件第10页浏览型号K9K1208D0C的Datasheet PDF文件第11页浏览型号K9K1208D0C的Datasheet PDF文件第12页浏览型号K9K1208D0C的Datasheet PDF文件第14页浏览型号K9K1208D0C的Datasheet PDF文件第15页浏览型号K9K1208D0C的Datasheet PDF文件第16页浏览型号K9K1208D0C的Datasheet PDF文件第17页  
K9K1208Q0C  
K9K1208D0C  
K9K1208U0C  
K9K1216Q0C  
K9K1216D0C  
K9K1216U0C  
FLASH MEMORY  
AC CHARACTERISTICS FOR OPERATION  
Min  
Max  
K9K1208X0C  
K9K12XXD0C  
K9K12XXU0C  
K9K1208X0C  
K9K12XXD0C  
K9K12XXU0C  
Parameter  
Symbol  
Unit  
K9K1216Q0C  
K9K1216Q0C  
Data Transfer from Cell to Register  
ALE to RE Delay  
tR  
tAR  
-
10  
10  
20  
25  
-
-
10  
10  
20  
40  
-
10  
10  
µs  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
-
-
CLE to RE Delay  
tCLR  
tRR  
-
-
Ready to RE Low  
-
-
RE Pulse Width  
tRP  
-
-
WE High to Busy  
tWB  
100  
100  
Read Cycle Time  
tRC  
50  
-
60  
-
-
-
30/35(1)  
RE Access Time  
tREA  
tCEA  
tRHZ  
tCHZ  
tOH  
40  
CE Access Time  
-
-
45  
55  
RE High to Output Hi-Z  
CE High to Output Hi-Z  
RE or CE High to Output hold  
RE High Hold Time  
-
-
30  
30  
-
-
20  
20  
15  
15  
0
15  
20  
0
-
-
tREH  
tIR  
-
-
Output Hi-Z to RE Low  
WE High to RE Low  
-
-
tWHR1  
tWHR2  
tRST  
60  
100  
-
60  
-
-
WE High to RE Low in Block Lcok  
Device Resetting Time(Read/Program/Erase)  
100  
-
-
5/10/500(2)  
5/10/500(2)  
-
NOTE: 1. K9F5608Q0C tREA = 35ns.  
2. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.  
13  
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