K9K1208Q0C
K9K1208D0C
K9K1208U0C
K9K1216Q0C
K9K1216D0C
K9K1216U0C
FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
K9K12XXX0C
Parameter
Symbol
Test Conditions
1.8V
2.65V
3.3V
Unit
Min Typ Max Min Typ Max Min Typ Max
Sequential
Read
tRC=50ns, CE=VIL
IOUT=0mA
Operat-
ing
ICC1
-
10
20
-
10 20
-
10
30
Current Program
ICC2
ICC3
-
-
-
-
10
10
20
20
-
-
10 20
10 20
-
-
10
10
40
40
mA
Erase
CE=VIH, WP=LOCKPRE=0V/VCC
Stand-by Current(TTL)
ISB1
-
-
-
1
-
-
-
1
-
-
-
1
Stand-by Cur-
rent(CMOS)
ISB2 CE=VCC-0.2, WP=LOCKPRE=0V/VCC
10
50
10 50
10
50
µA
Input Leakage Current
Output Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
-
-
±10
±10
-
-
-
-
±10
±10
-
-
-
-
±10
±10
ILO
VOUT=0 to Vcc(max)
VCCQ
-0.4
VCCQ
-0.4
VCCQ
+0.3
VCCQ
+0.3
VCCQ
+0.3
I/O pins
-
-
-
-
-
-
2.0
2.0
-
-
-
Input High Voltage
VIH*
VIL*
VCC
-0.4
VCC
-0.4
VCC
VCC
Vcc
Except I/O pins
+0.3
+0.3
+0.3
Input Low Voltage, All
inputs
-
-0.3
0.4 -0.3
0.5 -0.3
0.8
V
K9K12XXQ0C :IOH=-100µA
Output High Voltage
Level
VCCQ
-0.1
VCCQ
VOH K9K12XXD0C :IOH=-100µA
K9K12XXU0C :IOH=-400µA
-
-
-
-
-
-
0.4
-
2.4
-
-
-
-
-0.4
K9K12XXQ0C :IOL=100uA
VOL K9K12XXD0C :IOL=100µA
K9K12XXU0C :IOL=2.1mA
Output Low Voltage
Level
-
0.1
-
-
0.4
-
K9K12XXQ0C :VOL=0.1V
Output Low Current(R/B) IOL(R/B) K9K12XXD0C :VOL=0.1V
K9K12XXU0C :VOL=0.4V
3
4
3
4
8
10
mA
10
SAMSUNG [ SAMSUNG ]
