欢迎访问ic37.com |
会员登录 免费注册
发布采购

K9K1208D0C 参数 Datasheet PDF下载

K9K1208D0C图片预览
型号: K9K1208D0C
PDF下载: 下载PDF文件 查看货源
内容描述: 64M ×8位, 32M x 16位NAND闪存 [64M x 8 Bit , 32M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 39 页 / 955 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K9K1208D0C的Datasheet PDF文件第1页浏览型号K9K1208D0C的Datasheet PDF文件第2页浏览型号K9K1208D0C的Datasheet PDF文件第3页浏览型号K9K1208D0C的Datasheet PDF文件第4页浏览型号K9K1208D0C的Datasheet PDF文件第6页浏览型号K9K1208D0C的Datasheet PDF文件第7页浏览型号K9K1208D0C的Datasheet PDF文件第8页浏览型号K9K1208D0C的Datasheet PDF文件第9页  
K9K1208Q0C  
K9K1208D0C  
K9K1208U0C  
K9K1216Q0C  
K9K1216D0C  
K9K1216U0C  
FLASH MEMORY  
PIN DESCRIPTION  
Pin Name  
Pin Function  
DATA INPUTS/OUTPUTS  
I/O0 ~ I/O7  
(K9K1208X0C)  
I/O0 ~ I/O15  
The I/O pins are used to input command, address and data, and to output data during read operations. The I/  
O pins float to high-z when the chip is deselected or when the outputs are disabled.  
I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 oper-  
ation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and  
output.  
(K9K1216X0C)  
COMMAND LATCH ENABLE  
CLE  
ALE  
The CLE input controls the activating path for commands sent to the command register. When active high,  
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.  
ADDRESS LATCH ENABLE  
The ALE input controls the activating path for address to the internal address registers. Addresses are  
latched on the rising edge of WE with ALE high.  
CHIP ENABLE  
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and  
the device does not return to standby mode in program or erase operation. Regarding CE control during  
read operation, refer to ’Page read’ section of Device operation .  
CE  
READ ENABLE  
RE  
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid  
tREA after the falling edge of RE which also increments the internal column address counter by one.  
WRITE ENABLE  
WE  
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of  
the WE pulse.  
WRITE PROTECT  
The WP pin provides inadvertent write/erase protection during power tra nsitions. The internal high voltage  
generator is reset when the WP pin is active low. When LOCKPRE is a logic high and WP is a logic low, the  
all blocks go to lock state.  
WP  
READY/BUSY OUTPUT  
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or  
random read operation is in process and returns to high state upon completion. It is an open drain output and  
does not float to high-z condition when the chip is deselected or when outputs are disabled.  
R/B  
OUTPUT BUFFER POWER  
VccQ  
VccQ is the power supply for Output Buffer.  
VccQ is internally connected to Vcc, thus should be biased to Vcc.  
POWER  
Vcc  
Vss  
N.C  
VCC is the power supply for device.  
GROUND  
NO CONNECTION  
Lead is not internally connected.  
DO NOT USE  
Leave it disconnected  
DNU  
LOCK MECHANISM & POWER-ON AUTO-READ ENABLE  
To Enable and disable the Lock mechanism and Power On Auto Read. When LOCKPRE is a logic high,  
Block Lock mode and Power-On Auto-Read mode are enabled, and when LOCKPRE is a logic low, Block  
Lock mode and Power-On Auto-Read mode are disabled. Power-On Auto-Read mode is available only on  
3.3V device(K9K12XXU0C)  
LOCKPRE  
Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect it Vss or leave it N.C  
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.  
Do not leave VCC or VSS disconnected.  
5
 复制成功!