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K9F5608U0 参数 Datasheet PDF下载

K9F5608U0图片预览
型号: K9F5608U0
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位NAND闪存 [32M x 8 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 29 页 / 608 K
品牌: SAMSUNG [ SAMSUNG ]
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K9F5608U0A-YCB0,K9F5608U0A-YIB0  
FLASH MEMORY  
Data Protection & Powerup sequence  
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector  
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at VIL  
during power-up and power-down and recovery time of minimum 1ms is required before internal circuit gets ready for any command  
sequences as shown in Figure 13. The two step command sequence for program/erase provides additional software protection.  
Figure 13. AC Waveforms for Power Transition  
~ 2.5V  
~ 2.5V  
VCC  
High  
WP  
WE  
10ms  
28  
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