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K9F5608U0 参数 Datasheet PDF下载

K9F5608U0图片预览
型号: K9F5608U0
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位NAND闪存 [32M x 8 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 29 页 / 608 K
品牌: SAMSUNG [ SAMSUNG ]
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K9F5608U0A-YCB0,K9F5608U0A-YIB0  
FLASH MEMORY  
DEVICE OPERATION  
PAGE READ  
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command reg-  
ister along with three address cycles. Once the command is latched, it does not need to be written for the following page read opera-  
tion. Three types of operations are available : random read, serial page read and sequential row read.  
The random read mode is enabled when the page address is changed. The 528 bytes of data within the selected page are trans-  
ferred to the data registers in less than 10ms(tR). The system controller can detect the completion of this data transfer(tR) by analyz-  
ing the output of R/B pin. Once the data in a page is loaded into the registers, they may be read out in 50ns cycle time by sequentially  
pulsing RE. High to low transitions of the RE clock output the data stating from the selected column address up to the last column  
address(column 511 or 527 depending on the state of GND input pin).  
After the data of last column address is clocked out, the next page is automatically selected for sequential row read. Waiting 10ms  
again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. The way the Read1  
and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of bytes 512 to 527 may be  
selectively accessed by writing the Read2 command with GND input pin low. Addresses A0 to A3 set the starting address of the  
spare area while addresses A4 to A7 are ignored. Unless the operation is aborted, the page address is automatically incremented for  
sequential row read as in Read1 operation and spare sixteen bytes of each page may be sequentially read. The Read1 com-  
mand(00h/01h) is needed to move the pointer back to the main area. Figures 3 through 6 show typical sequence and timings for  
each read operation.  
Figure 3. Read1 Operation  
CLE  
CE  
WE  
ALE  
tR  
R/B  
RE  
Start Add.(3Cycle)  
A0 ~ A7 & A9 ~ A24  
00h  
Data Output(Sequential)  
I/O0~7  
(00h Command)  
(01h Command)*  
1st half array 2st half array  
1st half array 2st half array  
Data Field  
Spare Field  
Data Field  
Spare Field  
* After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half  
array (00h) at next cycle.  
21  
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