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K9F5608U0 参数 Datasheet PDF下载

K9F5608U0图片预览
型号: K9F5608U0
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位NAND闪存 [32M x 8 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 29 页 / 608 K
品牌: SAMSUNG [ SAMSUNG ]
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K9F5608U0A-YCB0,K9F5608U0A-YIB0  
FLASH MEMORY  
COPY-BACK PROGRAM  
The copy-back program is configured to quickly and efficiently rewrite data stored in one page within the array to another page within  
the same array without utilizing an external memory. Since the time-consuming sequently-reading and its re-loading cycles are  
removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of  
the block also need to be copied to the newly assigned free block. The operation for performing a copy-back is a sequential execution  
of page-read without burst-reading cycle and copying-program with the address of destination page. A normal read operation with  
"00h" command with the address of the source page moves the whole 528byte data into the internal buffer. As soon as the Flash  
returns to Ready state, copy-back programming command "8Ah" may be given with three address cycles of target page followed. The  
data stored in the internal buffer is then programmed directly into the memory cells of the destination page. Once the Copy-Back Pro-  
gram is finished, any additional partial page programming into the copied pages is prohibited before erase. Since the memory array is  
internally partitioned into two different planes, copy-back program is allowed only within the same memory plane. Thus, A14, the  
plane address, of source and destination page address must be the same. "When there is a program-failure at Copy-Back opera-  
tion, error is reported by pass/fail status. But, if Copy-Back operations are accumulated over time, bit error due to charge  
loss is not checked by external error detection/correction scheme. For this reason, two bit error correction is recommended  
for the use of Copy-Back operation."  
Figure 8. Copy-Back Program Operation  
tR  
tPROG  
R/B  
Add.(3Cycles)  
Pass  
I/O0~7  
00h  
Add.(3Cycles)  
I/O0  
Fail  
8Ah  
70h  
A0 ~ A7 & A9 ~ A24  
Source Address  
A0 ~ A7 & A9 ~ A24  
Destination Address  
BLOCK ERASE  
The Erase operation is done on a block(16K Byte) basis. Block address loading is accomplished in two cycles initiated by an Erase  
Setup command(60h). Only address A14 to A24 is valid while A9 to A13 is ignored. The Erase Confirm command(D0h) following the  
block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command  
ensures that memory contents are not accidentally erased due to external noise conditions.  
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When  
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 8 details the sequence.  
Figure 9. Block Erase Operation  
tBERS  
R/B  
Pass  
I/O0~7  
60h  
I/O0  
Fail  
70h  
Address Input(2Cycle)  
Block Add. : A9 ~ A24  
D0h  
24  
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