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K9F5608U0 参数 Datasheet PDF下载

K9F5608U0图片预览
型号: K9F5608U0
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位NAND闪存 [32M x 8 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 29 页 / 608 K
品牌: SAMSUNG [ SAMSUNG ]
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K9F5608U0A-YCB0,K9F5608U0A-YIB0  
FLASH MEMORY  
Figure 6. Sequential Row Read2 Operation (GND Input=Fixed Low)  
tR  
tR  
tR  
R/B  
Start Add.(3Cycle)  
Data Output  
1st  
Data Output  
I/O0~7  
50h  
Data Output  
2nd  
(16Byte)  
Nth  
(16Byte)  
A0 ~ A3 & A9 ~ A24  
(A4 ~ A7 :  
Don¢t Care)  
1st  
Block  
Nth  
Data Field  
Spare Field  
PAGE PROGRAM  
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte or consecutive  
bytes up to 528, in a single page program cycle. The number of consecutive partial page programming operation within the same  
page without an intervening erase operation should not exceed 2 for main array and 3 for spare array. The addressing may be done  
in any random order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes of data may be  
loaded into the page register, followed by a non-volatile programming period where the loaded data is programmed into the appropri-  
ate cell. Serial data loading can be started from 2nd half array by moving pointer. About the pointer operation, please refer to the  
attached technical notes.  
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the three cycle address input and  
then serial data loading. The bytes other than those to be programmed do not need to be loaded.The Page Program confirm com-  
mand(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the pro-  
gramming process. The internal write controller automatically executes the algorithms and timings necessary for program and verify,  
thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be  
entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle by  
monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are  
valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 7).  
The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in  
Read Status command mode until another valid command is written to the command register.  
Figure 7. Program Operation  
tPROG  
R/B  
Pass  
I/O0~7  
80h  
Address & Data Input  
I/O0  
Fail  
10h  
70h  
A0 ~ A7 & A9 ~ A24  
528 Byte Data  
23  
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