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K9F5608U0 参数 Datasheet PDF下载

K9F5608U0图片预览
型号: K9F5608U0
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位NAND闪存 [32M x 8 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 29 页 / 608 K
品牌: SAMSUNG [ SAMSUNG ]
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K9F5608U0A-YCB0,K9F5608U0A-YIB0  
FLASH MEMORY  
Figure 4. Read2 Operation  
CLE  
CE  
WE  
ALE  
tR  
R/B  
RE  
Start Add.(3Cycle)  
A0 ~ A3 & A9 ~ A24  
(A4 ~ A7 :  
Don't Care)  
50h  
Data Output(Sequential)  
Spare Field  
I/O0~7  
1st half array  
2nd half array  
Data Field  
Spare Field  
Figure 5. Sequential Row Read1 Operation  
tR  
tR  
tR  
R/B  
Data Output  
1st  
Data Output  
Data Output  
I/O0 ~ 7  
00h  
01h  
Start Add.(3Cycle)  
A0 ~ A7 & A9 ~ A24  
2nd  
(528 Byte)  
Nth  
(528 Byte)  
(GND input=L, 00h Command)  
(GND input=L, 01h Command)  
(GND input=H, 00h Command)  
1st half array  
2nd half array  
1st half array  
2nd half array  
1st half array  
2nd half array  
1st  
1st  
1st  
2nd  
Nth  
Block  
2nd  
Nth  
2nd  
Nth  
Data Field  
Spare Field  
Data Field  
Spare Field  
Data Field  
Spare Field  
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-  
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto  
the next block, read command and address must be given.  
22  
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