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K9F5608U0 参数 Datasheet PDF下载

K9F5608U0图片预览
型号: K9F5608U0
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位NAND闪存 [32M x 8 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 29 页 / 608 K
品牌: SAMSUNG [ SAMSUNG ]
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K9F5608U0A-YCB0,K9F5608U0A-YIB0  
FLASH MEMORY  
32M x 8 Bit NAND Flash Memory  
FEATURES  
GENERAL DESCRIPTION  
· Voltage Supply : 2.7V~3.6V  
The K9F5608U0A are a 32M(33,554,432)x8bit NAND Flash  
Memory with a spare 1,024K(1,048,576)x8bit. Its NAND cell  
provides the most cost-effective solution for the solid state  
mass storage market. A program operation programs the 528-  
byte page in typical 200ms and an erase operation can be per-  
formed in typical 2ms on a 16K-byte block. Data in the page  
can be read out at 50ns cycle time per byte. The I/O pins serve  
as the ports for address and data input/output as well as com-  
mand inputs. The on-chip write controller automates all pro-  
gram and erase functions including pulse repetition, where  
required, and internal verification and margining of data. Even  
the write-intensive systems can take advantage of the  
K9F5608U0A¢s extended reliability of 100K program/erase  
cycles by providing ECC(Error Correcting Code) with real time  
mapping-out algorithm.  
· Organization  
- Memory Cell Array : (32M + 1024K)bit x 8bit  
- Data Register : (512 + 16)bit x8bit  
· Automatic Program and Erase  
- Page Program : (512 + 16)Byte  
- Block Erase : (16K + 512)Byte  
· 528-Byte Page Read Operation  
- Random Access : 10ms(Max.)  
- Serial Page Access : 50ns(Min.)  
· Fast Write Cycle Time  
- Program time : 200ms(Typ.)  
- Block Erase Time : 2ms(Typ.)  
· Command/Address/Data Multiplexed I/O Port  
· Hardware Data Protection  
- Program/Erase Lockout During Power Transitions  
· Reliable CMOS Floating-Gate Technology  
- Endurance : 100K Program/Erase Cycles  
- Data Retention : 10 Years  
The K9F5608U0A-YCB0/YIB0 is an optimum solution for large  
nonvolatile storage applications such as solid state file storage  
and other portable applications requiring non-volatility.  
· Command Register Operation  
· Intelligent Copy-Back  
· Package :  
- K9F5608U0A-YCB0/YIB0 :  
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)  
PIN CONFIGURATION  
PIN DESCRIPTION  
K9F5608U0A-YCB0/YIB0  
N.C  
N.C  
N.C  
N.C  
I/O7  
I/O6  
I/O5  
I/O4  
N.C  
N.C  
N.C  
Vcc  
Vss  
N.C  
N.C  
N.C  
I/O3  
I/O2  
I/O1  
I/O0  
N.C  
N.C  
N.C  
N.C  
N.C  
N.C  
N.C  
N.C  
N.C  
GND  
R/B  
RE  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
1
2
Pin Name  
I/O0 ~ I/O7  
CLE  
Pin Function  
Data Input/Outputs  
3
4
5
6
Command Latch Enable  
Address Latch Enable  
Chip Enable  
7
8
CE  
9
ALE  
N.C  
N.C  
Vcc  
Vss  
N.C  
N.C  
CLE  
ALE  
WE  
WP  
N.C  
N.C  
N.C  
N.C  
N.C  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
CE  
RE  
Read Enable  
WE  
Write Enable  
WP  
Write Protect  
GND  
R/B  
GND input for enabling spare area  
Ready/Busy output  
Power  
VCC  
VSS  
Ground  
N.C  
No Connection  
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.  
Do not leave VCC or VSS disconnected.  
2
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