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K6F4008U2E-EF55 参数 Datasheet PDF下载

K6F4008U2E-EF55图片预览
型号: K6F4008U2E-EF55
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8位超低功耗和低电压全CMOS静态RAM [512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM]
分类和应用:
文件页数/大小: 9 页 / 112 K
品牌: SAMSUNG [ SAMSUNG ]
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K6F4008U2E Family  
CMOS SRAM  
PRODUCT LIST  
Industrial Temperature Products(-40~85°C)  
Part Name  
Function  
K6F4008U2E-EF55  
K6F4008U2E-EF70  
48(36)-TBGA, 55ns, 3.0V  
48(36)-TBGA, 70ns, 3.0V  
FUNCTIONAL DESCRIPTION  
CS1  
CS2  
OE  
WE  
I/O  
Mode  
Deselected  
Deselected  
Output Disabled  
Read  
Power  
Standby  
Standby  
Active  
X1)  
L
X1)  
X1)  
H
High-Z  
High-Z  
High-Z  
Dout  
X1)  
L
X1)  
H
X1)  
H
H
H
H
L
L
L
H
L
Active  
X1)  
Din  
Write  
Active  
1. X means don¢t care (Must be in low or high state)  
ABSOLUTE MAXIMUM RATINGS1)  
Item  
Voltage on any pin relative to Vss  
Voltage on Vcc supply relative to Vss  
Power Dissipation  
Symbol  
Ratings  
-0.5 to VCC+0.3V(Max. 3.6V)  
-0.3 to 3.6  
Unit  
VIN, VOUT  
VCC  
V
V
PD  
1.0  
W
°C  
°C  
Storage temperature  
TSTG  
TA  
-65 to 150  
Operating Temperature  
-40 to 85  
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be  
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
Revision 1.0  
March 2001  
- 3 -  
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