K4S640832K
K4S641632K
Synchronous DRAM
200MHz/133MHz Pull-up
1.5 2.5
IBIS SPECIFICATION
0
0.5
1
2
3
3.5
IOH Characteristics (Pull-up)
0
-100
-200
-300
-400
-500
-600
200MHz/133MHz 200MHz/133MHz
Voltage
Min
I (mA)
-
Max
(V)
I (mA)
3.45
3.30
3.00
2.70
2.50
1.95
1.80
1.65
1.50
1.40
1.00
0.20
-1.68
-
-19.11
-51.87
-90.44
-107.31
-137.9
-158.34
-173.6
-188.79
-199.01
-241.15
-351.68
-0.35
-3.75
-6.65
-13.75
-17.75
-20.55
-23.55
-26.2
-36.25
-46.5
Voltage
IOH Min (200MHz / 133MHz)
IOH Max (200MHz / 133MHz)
200MHz/133MHz Pull-down
IOL Characteristics (Pull-down)
250
200
150
100
50
200MHz/133MHz 200MHz/133MHz
Voltage
Min
I (mA)
43.92
-
Max
I (mA)
155.82
-
153.72
148.40
146.02
141.75
136.08
131.39
105.84
93.66
75.25
49.14
(V)
3.45
3.30
3.00
1.95
1.80
1.65
1.50
1.40
1.00
0.85
0.65
0.40
43.36
41.20
40.56
39.60
38.40
37.28
30.08
26.64
21.52
14.16
0
0
0.5
1
1.5
2
2.5
3
3.5
Voltage
IOL Min (200MHz / 133MHz)
IOL Max (200MHz / 133MHz)
Rev. 1.1 February 2006
12 of 14
SAMSUNG [ SAMSUNG ]
