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K4J55323QG-BC14 参数 Datasheet PDF下载

K4J55323QG-BC14图片预览
型号: K4J55323QG-BC14
PDF下载: 下载PDF文件 查看货源
内容描述: 的256Mbit GDDR3 SDRAM [256Mbit GDDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 53 页 / 1359 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K4J55323QG-BC14的Datasheet PDF文件第44页浏览型号K4J55323QG-BC14的Datasheet PDF文件第45页浏览型号K4J55323QG-BC14的Datasheet PDF文件第46页浏览型号K4J55323QG-BC14的Datasheet PDF文件第47页浏览型号K4J55323QG-BC14的Datasheet PDF文件第49页浏览型号K4J55323QG-BC14的Datasheet PDF文件第50页浏览型号K4J55323QG-BC14的Datasheet PDF文件第51页浏览型号K4J55323QG-BC14的Datasheet PDF文件第52页  
256M GDDR3 SDRAM  
K4J55323QG  
10.0 AC & DC OPERATING CONDITIONS  
10.1 ABSOLUTE MAXIMUM RATINGS  
Parameter  
Voltage on any pin relative to Vss  
Voltage on VDD supply relative to Vss  
Voltage on VDDQ supply relative to Vss  
MAX Junction Temperature  
Storage temperature  
Symbol  
VIN, VOUT  
VDD  
VDDQ  
TJ  
Value  
Unit  
V
V
-0.5 ~ VDDQ + 0.5V  
-0.5 ~ 2.5  
-0.5 ~ 2.5  
+125  
V
°C  
°C  
W
TSTG  
PD  
-55 ~ +150  
TBD  
Power dissipation  
Short Circuit Output Current  
Note :  
IOS  
50  
mA  
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rat-  
ing only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this  
specification is not implied. Exposure periods may affect reliability.  
10.2 POWER & DC OPERATING CONDITIONS  
Recommended operating conditions (Voltage referenced to 0°C Tc ≤ 85°C ; VDD=1.8V + 0.1V, VDDQ=1.8V + 0.1V)  
Parameter  
Device Supply voltage  
Output Supply voltage  
Symbol  
VDD  
VDDQ  
Min  
1.7  
1.7  
0.69*VDDQ  
Typ  
1.8  
1.8  
-
-
-
-
-
-
-
Max  
1.9  
Unit  
V
V
V
V
V
V
V
V
Note  
1
1
2
3
3
1.9  
0.71*VDDQ  
-
VREF-0.15  
0.76  
Reference voltage  
VREF  
DC Input logic high voltage  
DC Input logic low voltage  
Output logic low voltage  
AC Input logic high voltage  
AC Input logic low voltage  
Input leakage current  
Any input 0V-<VIN -< VDDQ  
(All other pins not under test = 0V)  
VIH (DC)  
VIL (DC)  
VOL(DC)  
VIH(AC)  
VIL(AC)  
VREF+0.15  
-
-
VREF+0.25  
-
-
3,4,5  
3,4,5  
VREF-0.25  
uA  
II  
-5  
-5  
5
5
Output leakage current  
(DQs are disabled ; 0V-<VOUT -< VDDQ)  
IIOZ  
-
uA  
Note :  
1. Under all conditions, VDDQ must be less than or equal to VDD.  
2. VREF is expected to equal 70% of VDDQ for the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF  
may not exceed + 2 percent of the DC value. Thus, from 70% of VDDQ, VREF is allowed + 25mV for DC error and an additional +25mV for AC noise.  
3. The DC values define where the input slew rate requirements are imposed, and the input signal must not violate these levels in order to maintain a valid  
level. The inputs require the AC value to be achieved during signal transition edge and the driver should achieve the same slew rate through the AC  
values.  
4. Input and output slew rate =3V/ns. If the input slew rate is less than 3V/ns, input timing may be compromised. All slew rate are measured between  
Vih and Vil. DQ and DM input slew rate must not deviate from DQS by more than 10%. If the DQ,DM and DQS slew rate is less than 3V/ns, timing is  
longer than referenced to the mid-point but to the VIL(AC) maximum and VIH(AC) minimum points.  
5. VIH overshoot : VIH(max) = VDDQ + 0.5V for a pulse width 500ps and the pulse width can not be greater than 1/3 of the cycle rate.  
VIL undershoot : VIL(min)=0.0V for a pulse width 500ps and the pulse width can not be greater than 1/3 of the cycle rate.  
48 of 53  
Rev. 1.1 November 2005  
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