256M GDDR3 SDRAM
K4J55323QG
AC CHARACTERISTICS (II)
Parameter
-12
Min Max Min Max Min Max Min Max
-14
-16
-20
Symbol
Unit Note
Row active time
Row cycle time
Refresh row cycle time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
tRAS
tRC
tRFC
tRCDR
tRCDW
tRP
tRRD
tWR
tCDLR
tMRD
tDAL
25
35
45
12
8
10
8
11
6
7
100K
22
31
39
10
6
9
8
10
5
6
19
20000
100K
19
27
31
9
5
8
7
9
4
100K
15
21
27
7
4
6
5
7
3
100K tCK
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
Row active to Row active
Last data in to Row precharge (PRE or Auto-PRE)
Last data in to Read command
Mode register set cycle time
Auto precharge write recovery time + Precharge
Exit self refresh to Read command
-
-
-
-
-
5
17
20000
4
13
20000
21
tXSR 20000
7tCK
6tCK
6tCK
4tCK
Power-down exit time
Refresh interval time
tPDEX
-
-
-
-
tCK
us
+tIS
+tIS
+tIS
+tIS
tREF
-
7.8
-
7.8
-
7.8
-
7.8
52 of 53
Rev. 1.1 November 2005
SAMSUNG [ SAMSUNG ]
