256M GDDR3 SDRAM
K4J55323QG
10.4 DC CHARACTERISTICS
(0°C ≤ Tc ≤85°C ; VDD=1.8V + 0.1V, VDDQ=1.8V + 0.1V)
Version
Parameter
Symbol
Test Condition
Unit
-12
-14
-16
-20
Operating Current
(One Bank Active)
Precharge Standby Current
in Power-down mode
Precharge Standby Current
in Non Power-down mode
Active Standby Current
power-down mode
Active Standby Current in
in Non Power-down mode
Operating Current
( Burst Mode)
Burst Length=4 tRC ≥ tRC(min)
ICC1
440
420
410
400
mA
mA
mA
mA
mA
mA
IOL=0mA, tCC= tCC(min)
ICC2P CKE ≤ VIL(max), tCC= tCC(min)
100
220
120
350
900
90
80
70
160
90
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
ICC2N
200
110
320
820
180
100
310
750
ICC3P CKE ≤ VIL(max), tCC= tCC(min)
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
IOL=0mA ,tCC= tCC(min),
Page Burst, All Banks activated.
ICC3N
300
650
ICC4
Refresh Current
Self Refresh Current
ICC5
ICC6
tRC≥ tRFC
CKE ≤ 0.2V
510
10
480
10
460
10
440
10
mA
mA
Burst Length=4 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
Operating Current
(4Bank interleaving)
ICC7
1050
935
860
830
mA
Note :
1. Measured with outputs open and ODT off
2. Refresh period is 32ms
10.5 CAPACITANCE
(VDD=1.8V, TA= 25°C, f=1MHz)
Parameter
Input capacitance ( CK, CK )
Symbol
CIN1
Min
1.5
Max
Unit
pF
3
Input capacitance (A0~A11, BA0~BA1)
CIN2
1.5
3
pF
Input capacitance
( CKE, CS, RAS,CAS, WE )
CIN3
1.5
3
pF
Data & DQS input/output capacitance(DQ0~DQ31)
Input capacitance(DM0 ~ DM3)
COUT
CIN4
1.5
1.5
2
2
pF
pF
50 of 53
Rev. 1.1 November 2005
SAMSUNG [ SAMSUNG ]
