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K4J55323QG-BC14 参数 Datasheet PDF下载

K4J55323QG-BC14图片预览
型号: K4J55323QG-BC14
PDF下载: 下载PDF文件 查看货源
内容描述: 的256Mbit GDDR3 SDRAM [256Mbit GDDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 53 页 / 1359 K
品牌: SAMSUNG [ SAMSUNG ]
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256M GDDR3 SDRAM  
K4J55323QG  
DATA TERMINATION DISABLE  
(BUS SNOOPING FOR READ COMMAND)  
The DATA TERMINATOR DISABLE COMMAND is detected by the device by snooping the bus for READ commands excluding /CS.  
The GDDR3 DRAM will disable its Data terminators when a READ command is detected. The terminators are disable CL-1 Clocks after  
the READ command is detected. In a two rank system both dram devices will snoop the bus for READ commands to either device and  
both will disable their terminators if a READ command is detected. The command and address terminators and always enabled.  
ON-DIE TERMINATION  
Bus snooping for READ commands other than /CS is used to control the on-die termination in the dual load configuration. The GDDR3  
SDRAM will disable the on-die termination when a READ command is detected, regardless of the state of  
/CS, when the ODT for the DQ pins are set for dual loads (120Ω). The on-die termination is disabled x clocks after the READ command  
where x equals CL-1 and stay off for a duration of BL/2 + 2, as below figure, Data Termination Disable Timing. In a two-rank system, both  
DRAM devices snoop the bus for READ commands to either device and both will disable the on-die termination if a READ command is  
detected. The on-die termination for all other pins on the device are always on for both a single-rank system and a dual-rank system.  
The on-die termination value on address and control pins is determined during power-up in relation to the state of CKE on the first tran-  
sition of RESET. On the rising edge of RESET, if CKE is sampled LOW, then the configuration is determined to be a single-rank system.  
The on-die termination is then set to one-half ZQ for the address pins. On the rising edge of RESET, if CKE is sampled HIGH, then the  
configuration is determined to be a dual-rank system. The on-die termination for the DQs, WDQS, and DM pins is set in the EMRS.  
Data Termination Disable Timing  
T0  
T7  
T8  
T8n  
T9  
T9n  
T10  
T11  
CK#  
CK  
COMMAND  
ADDRESS  
READ  
NOP  
NOP  
NOP  
NOP  
NOP  
Bank a,  
Col n  
CL = 8  
RDQS  
DQ  
DO  
n
DQ  
GDDR3 Data Termination is Disabled  
TERMINATION  
DON’T CARE  
TRANSITIONING DATA  
Note : 1. DO n = data-out from column n.  
2. Burst length = 4.  
3. Three subsequent elements of data-out appear in the specified order following DO n.  
4. Shown with nominal tAC and tDQSQ  
.
5. RDQS will start driving high one-half cycle prior to the first falling edge.  
6. The Data Terminators are disabled starting at CL-1 and the duration is BL/2 + 2  
7. READS to either rank disable both ranks’ termination regardless of the logic level of /CS.  
47 of 53  
Rev. 1.1 November 2005  
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