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K4J55323QG-BC14 参数 Datasheet PDF下载

K4J55323QG-BC14图片预览
型号: K4J55323QG-BC14
PDF下载: 下载PDF文件 查看货源
内容描述: 的256Mbit GDDR3 SDRAM [256Mbit GDDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 53 页 / 1359 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K4J55323QG-BC14的Datasheet PDF文件第40页浏览型号K4J55323QG-BC14的Datasheet PDF文件第41页浏览型号K4J55323QG-BC14的Datasheet PDF文件第42页浏览型号K4J55323QG-BC14的Datasheet PDF文件第43页浏览型号K4J55323QG-BC14的Datasheet PDF文件第45页浏览型号K4J55323QG-BC14的Datasheet PDF文件第46页浏览型号K4J55323QG-BC14的Datasheet PDF文件第47页浏览型号K4J55323QG-BC14的Datasheet PDF文件第48页  
256M GDDR3 SDRAM  
K4J55323QG  
3. Current state definitions :  
Idle : The bank has been precharged, and t has been met.  
RP  
Row Active : A row in the bank has been activated, and t  
has been met.  
RCD  
No data bursts/accesses and no register accesses are in progress.  
Read : A READ burst has been initiated, with auto precharge disabled.  
Write : A WRITE burst has been initiated, with auto precharge disabled.  
Read w/ Auto- : See following text  
Precharge Enabled  
Write w/ Auto- : See following text  
Precharge Enabled  
3a. The read with auto precharge enabled or write with auto precharge enabled states can each be broken into two parts : the access period and the  
precharge period. For read with auto precharge, the precharge period is defined as if the same burst was executed with auto precharge disabled  
and then followed with the earliest possible PRECHARGE command that still accesses all of the data in the burst. For write with auto precharge, the  
precharge period begins when tWR ends, with tWR command and ends where the precharge period (or t ) begins. During the precharge period of  
RP  
the read with auto precharge enabled or write with auto precharge enabled states, ACTIVE, PRECHARGE, READ and WRITE commands to the  
other bank may be applied. In either case, all other related Limitations apply (e.g., contention between read data write data must be avoided).  
3b. The minimum delay from a READ or WRITE command with auto precharge enabled, to a command to a different bank is summarized below.  
From Command  
To Command  
READ or READ w/AP  
WRITE or WRITE w/AP  
PRECHARGE  
Minimum delay (with concurrent auto precharge)  
[WL + (BL/2)] tCK + tWR  
(BL/2) * tCK  
WRITE w/AP  
1 tCK  
ACTIVE  
1 tCK  
(BL/2) * tCK  
READ or READ w/AP  
WRITE or WRITE w/AP  
PRECHARGE  
[CLRU + (BL/2)] + 1 - WL * tCK  
1 tCK  
READ w/AP  
ACTIVE  
1 tCK  
4. AUTO REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle.  
5. All states and sequences not shown are illegal or reserved.  
6. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto  
precharge disabled.  
7. Requires appropriate DM masking.  
44 of 53  
Rev. 1.1 November 2005  
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