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K4J55323QG-BC14 参数 Datasheet PDF下载

K4J55323QG-BC14图片预览
型号: K4J55323QG-BC14
PDF下载: 下载PDF文件 查看货源
内容描述: 的256Mbit GDDR3 SDRAM [256Mbit GDDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 53 页 / 1359 K
品牌: SAMSUNG [ SAMSUNG ]
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256M GDDR3 SDRAM  
K4J55323QG  
WRITE LATENCY  
The Write latency (WL) is the delay, in clock cycles, between the registration of a WRITE command and the availability of the first bit of  
input data. The latency can be set from 1 to 7 clocks depending in the operating frequency and desired current draw. When the write  
latencies are set to 1 or 2 or 3 clocks, the input receivers never turn off when the WRITE command is registered. If a WRITE command  
is registered at clock edge n, and the latency is m clocks, the data will be available nominally coincident with clock edge n+m. Reserved  
states should not be used as unknown operation or incompatibility with future versions may result.  
T0  
T1  
T2  
T3  
T3n  
/CK  
CK  
COMMAND  
WDQS  
WRITE  
NOP  
NOP  
NOP  
WL = 3  
DQ  
T0  
T2  
T3  
T4  
T4n  
/CK  
CK  
COMMAND  
WDQS  
WRITE  
NOP  
NOP  
NOP  
WL = 4  
DQ  
Burst Length = 4 in the cases shown  
DON’T CARE  
TRANSITIONING DATA  
12 of 53  
Rev. 1.1 November 2005  
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