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K4D64163HF-TC33 参数 Datasheet PDF下载

K4D64163HF-TC33图片预览
型号: K4D64163HF-TC33
PDF下载: 下载PDF文件 查看货源
内容描述: 1米x 16Bit的×4银行双数据速率同步DRAM [1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM]
分类和应用: 内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 16 页 / 164 K
品牌: SAMSUNG [ SAMSUNG ]
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64M DDR SDRAM  
K4D64163HF  
FUNCTIONAL DESCRIPTION  
Power-Up Sequence  
DDR SDRAMs must be powered up and initialized in a predefined manner to prevent undefined operations.  
1. Apply power and keep CKE at low state (All other inputs may be undefined)  
- Apply VDD before VDDQ .  
- Apply VDDQ before VREF & VTT  
2. Start clock and maintain stable condition for minimum 200us.  
3. The minimum of 200us after stable power and clock(CK,CK ), apply NOP and take CKE to be high .  
4. Issue precharge command for all banks of the device.  
5. Issue a EMRS command to enable DLL  
*1  
6. Issue a MRS command to reset DLL. The additional 200 clock cycles are required to lock the DLL.  
*1,2 7. Issue precharge command for all banks of the device.  
8. Issue at least 2 or more auto-refresh commands.  
9. Issue a mode register set command with A8 to low to initialize the mode register.  
*1 The additional 200cycles of clock input is required to lock the DLL after enabling DLL.  
*2 Sequence of 6&7 is regardless of the order.  
Power up & Initialization Sequence  
0
1
2
3
4
5
6
7
8
9
10  
11  
12 13  
14  
15  
16 17  
18  
19  
CK,CK  
tRP  
2 Clock min.  
tRFC  
tRFC  
2 Clock min.  
tRP  
2 Clock min.  
Command  
precharge  
ALL Banks  
2nd Auto  
Refresh  
precharge  
ALL Banks  
MRS  
DLL Reset  
1st Auto  
Refresh  
Mode  
Register Set  
Any  
Command  
EMRS  
200 Clock min.  
Inputs must be  
stable for 200us  
- 7 -  
Rev. 1.1(Aug. 2002)  
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