64M DDR SDRAM
K4D64163HF
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
with Bi-directional Data Strobe and DLL
FEATURES
• 3.3V + 5% power supply for device operation
• 2.5V + 5% power supply for I/O interface
• SSTL_2 compatible inputs/outputs
• 4 banks operation
• 2 DQS’s ( 1DQS / Byte )
• Data I/O transactions on both edges of Data strobe
• DLL aligns DQ and DQS transitions with Clock transition
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• DM for write masking only
• MRS cycle with address key programs
-. Read latency 3 (clock)
-. Burst length (2, 4 and 8)
• Auto & Self refresh
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive
going edge of the system clock
• 64ms refresh period (4K cycle)
• 66pin TSOP-II
• Maximum clock frequency up to 300MHz
• Maximum data rate up to 600Mbps/pin
• Differential clock input
• No Wrtie-Interrupted by Read Function
ORDERING INFORMATION
Part NO.
Max Freq.
300MHz
275MHz
250MHz
200MHz
166MHz
Max Data Rate
600Mbps/pin
550Mbps/pin
500Mbps/pin
400Mbps/pin
333Mbps/pin
Interface
Package
K4D64163HF-TC33
K4D64163HF-TC36
K4D64163HF-TC40
K4D64163HF-TC50
K4D64163HF-TC60
SSTL_2
66 pin TSOP-II
GENERAL DESCRIPTION
FOR 1M x 16Bit x 4 Bank DDR SDRAM
The K4D64163H is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 16
bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 1.2GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of
operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of
high performance memory system applications.
- 3 -
Rev. 1.1(Aug. 2002)
SAMSUNG [ SAMSUNG ]
