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K4D64163HF-TC33 参数 Datasheet PDF下载

K4D64163HF-TC33图片预览
型号: K4D64163HF-TC33
PDF下载: 下载PDF文件 查看货源
内容描述: 1米x 16Bit的×4银行双数据速率同步DRAM [1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM]
分类和应用: 内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 16 页 / 164 K
品牌: SAMSUNG [ SAMSUNG ]
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64M DDR SDRAM  
K4D64163HF  
INPUT/OUTPUT FUNCTIONAL DESCRIPTION  
Symbol  
Type  
Function  
The differential system clock Input.  
CK, CK*1  
Input  
Input  
Input  
All of the inputs are sampled on the rising edge of the clock except  
DQs and DMs that are sampled on both edges of the DQS.  
Activates the CK signal when high and deactivates the CK signal  
when low. By deactivating the clock, CKE low indicates the Power  
down mode or Self refresh mode.  
CKE  
CS  
CS enables the command decoder when low and disabled the com-  
mand decoder when high. When the command decoder is disabled,  
new commands are ignored but previous operations continue.  
Latches row addresses on the positive going edge of the CK with  
RAS low. Enables row access & precharge.  
RAS  
CAS  
WE  
Input  
Input  
Input  
Latches column addresses on the positive going edge of the CK with  
CAS low. Enables column access.  
Enables write operation and row precharge.  
Latches data in starting from CAS, WE active.  
Data Strobe : Output with read data, input with write data. Edge-  
aligned with read data, centered in write data. Used to capture write  
data. For the x16, LDQS corresponds to the data on DQ0-DQ7 ;  
UDQS corresponds to the data on DQ8-DQ15.  
LDQS,(U)DQS  
LDM,UDM  
Input/Output  
Input Data Mask : DM is an input mask signal for write data. Input  
data is masked when DM is sampled HIGH along with that input data  
during a WRITE access. DM is sampled on both edges of DQS. DM  
pins include dummy loading internally, to matches the DQ and DQS  
loading. For the x16, LDM corresponds to the data on DQ0-DQ7 ;  
UDM correspons to the data on DQ8-DQ15.  
Input  
DQ0 ~ DQ15  
BA0, BA1  
Input/Output  
Input  
Data inputs/Outputs are multiplexed on the same pins.  
Selects which bank is to be active.  
Row/Column addresses are multiplexed on the same pins.  
Row addresses : RA0 ~ RA11, Column addresses : CA0 ~ CA7.  
A0 ~ A11  
VDD/VSS  
Input  
Power Supply  
Power Supply  
Power Supply  
Power and ground for the input buffers and core logic.  
Isolated power supply and ground for the output buffers to provide  
improved noise immunity.  
VDDQ/VSSQ  
VREF  
Reference voltage for inputs, used for SSTL interface.  
NC/RFU  
No connection/  
This pin is recommended to be left "No connection" on the device  
Reserved for future use  
*1 : The timing reference point for the differential clocking is the cross point of CK and CK.  
For any applications using the single ended clocking, apply VREF to CK pin.  
- 5 -  
Rev. 1.1(Aug. 2002)  
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