STM8320
Ver 1.0
60
50
20.0
Is, Source-drain current(A)
I
D
=7.5A
10.0
R
DS(on)
(m
Ω
)
40
30
20
75 C
125 C
25 C
125 C
75 C
25 C
10
0
0
2
4
6
8
10
1.0
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
600
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
GS
, Gate to Source Voltage(V)
500
C, Capacitance(pF)
8
6
4
2
0
0
Ciss
400
300
200
Coss
100
Crss
0
0
5
10
15
20
25
30
V
DS
=15V
I
D
=7.5A
1
2
3
4
5
6
7
8
9
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
80
L
N)
im
it
10
0u
s
600
Switching Time(ns)
100
60
TD(off )
I
D
, Drain Current(A)
Tr
TD(on)
Tf
10
R
D
S
(O
1m
10
ms
s
10
VDS=15V,ID=1A
VGS=10V
1
V
G S
=10V
S ingle P ulse
T c=25 C
DC
1
1
6 10
60 100
300 600
0.1
0.05
0.1
1
10
100
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,17,2008
5
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
