STM8320
Ver 1.0
P-Channel
20
20
16
VGS=10V
VGS=5V
125 C
VGS=4V
16
12
8
VGS=4.5V
12
8
VGS=3.5V
25 C
-55 C
VGS=3V
4
4
0
0
0
0
0.9
1.8
2.7
5.4
3.6
4.5
0.5
1
1.5
2
2.5
3
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
90
1.5
1.4
1.3
1.2
75
60
45
VGS=-10V
ID=-6.0A
VGS=-4.5V
VGS=-10V
VGS=-4.5V
ID=-4.8A
30
15
1
1.1
1.0
0.9
150
1
0
4
8
12
16
20
125
°
25
50
100
75
°
Tj( C )
ID, Drain Current(A)
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.2
1.3
VDS=VGS
ID=-250uA
1.2
1.1
ID=-250uA
1.0
0.9
0.8
1.1
1.0
0.9
0.7
0.8
0.7
0.6
0.5
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50
75 100 125 150
°
Tj, Junction Temperature( C )
°
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,17,2008
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
