STM8320
Ver 1.0
100
90
20.0
Is, Source-drain current(A)
I
D
=-6.0A
10.0
R
DS(on)
(m
Ω
)
80
60
125
C
40
20
0
75 C
25 C
125 C
25 C
75 C
1.0
0
2
4
6
8
10
0
0.25
0.5
0.75
1.0
1.25
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
1200
1000
10
V
GS
, Gate to Source Voltage(V)
C, Capacitance(pF)
Ciss
8
6
4
2
0
0
V
DS
=-15V
I
D
=-6.0A
800
600
400
200
Crss
Coss
0
0
5
10
15
20
25
30
3
6
9
12
15
18
21
24
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
250
Tr
80
L
N)
im
it
10
10
1m
s
I
D
, Drain Current(A)
Switching Time(ns)
100
60
10
TD(off)
Tf
10
R
D
S
(O
0u
s
TD(on)
ms
1
V
G S
=10V
S ingle P ulse
T c=25 C
DC
1
1
V
DS
=-15V,I
D
=-6.0A
V
GS
=-10V
6 10
60 100 300 600
0.1
0.05
0.1
1
10
100
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,17,2008
8
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
