STM8320
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
1
±10
uA
uA
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
c
V
GS
=0V , I
D
=250uA
V
DS
=24V , V
GS
=0V
30
V
GS
= ±20V , V
DS
=0V
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=7.5A
V
GS
=4.5V , I
D
=6.5A
V
DS
=10V , I
D
=4.0A
1
1.8
18
26
14
3
23
35
V
m ohm
m ohm
S
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
tr
Rise Time
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
V
DS
=15V,V
GS
=0V
f=1.0MHz
420
130
78
pF
pF
pF
V
DD
=15V
I
D
=1A
V
GS
=10V
R
GEN
=6 ohm
V
DS
=15V,I
D
=7.5A,V
GS
=10V
V
DS
=15V,I
D
=7.5A,V
GS
=4.5V
V
DS
=15V,I
D
=7.5A,
V
GS
=10V
8
11
40
15
7.9
4.3
1.2
2.5
ns
ns
ns
ns
nC
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuous Drain-Source Diode Forward Current
I
S
V
SD
Diode Forward Voltage
b
1.3
0.78
1.3
A
V
V
GS
=0V,I
S
=1.3A
Sep,17,2008
2
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
