STM8320
Ver 1.0
N-Channel
35
V
GS
=10V
V
GS
=4.5V
V
GS
=5V
20
I
D
, Drain Current(A)
21
V
GS
=3.5V
I
D
, Drain Current(A)
28
V
GS
=4V
16
12
14
8
Tj=125 C
4
0
-55 C
25 C
7
V
GS
=3V
0
0
0.5
1
1.5
2
2.5
3
0
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
60
50
Figure 2. Transfer Characteristics
1.6
1.5
1.4
1.3
1.2
1.1
0.0
V
G S
=4.5V
I
D
=6.5A
V
G S
=10V
I
D
=7.5A
R
DS(on)
(m
Ω
)
40
30
20
V
GS
=10V
10
1
V
GS
=4.5V
1
R
DS(on)
, On-Resistance
Normalized
7
14
21
28
35
0
25
50
75
100
125
150
T j (
°C )
I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.3
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.15
I
D
=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100 125 150
Vth, Normalized
Gate-Source Threshold Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
V
DS
=V
GS
I
D
=250uA
100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
4
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,17,2008
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
