STM8320
S a mHop Microelectronics C orp.
Ver 1.0
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PRODUCT SUMMARY (N-Channel)
V
DSS
30V
PRODUCT SUMMARY (P-Channel)
V
DSS
-30V
I
D
7.5A
R
DS(ON)
(m
Ω
) Max
23
@
VGS=10V
I
D
-6.0A
R
DS(ON)
(m
Ω
) Max
35
@
VGS=-10V
55
@
VGS=-4.5V
35
@
VGS=4.5V
D
2
D
2
5
6
7
8
4
3
2
1
G
2
S
2
G
1
S
1
S O-8
1
D
1
D
1
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
d
a
N-Channel
30
±20
T
A
=25°C
T
A
=70°C
7.5
6.0
27
10
T
A
=25°C
T
A
=70°C
2
1.28
P-Channel
-30
±20
-6.0
-4.8
-22
18
Units
V
V
A
A
A
mJ
W
°C
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
a
62.5
°C/W
Details are subject to change without notice.
Sep,17,2008
1
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
