STM8320
Ver 1.0
°
P-Channel ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted
)
(
Parameter
Min
Symbol
Conditions
Typ
Max Units
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V
BVDSS
IDSS
VGS=0V , ID=-250uA
VDS=-24V , VGS=0V
VGS= 20V , VDS=0V
-30
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
uA
uA
-1
10
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
-1.0
-1.8
28
-3.0
35
VGS(th)
VDS=VGS , ID=-250uA
VGS=-10V , ID=-6.0A
VGS=-4.5V , ID=-4.8A
VDS=-10V , ID=-3.0A
V
m ohm
m ohm
S
RDS(ON)
gFS
Drain-Source On-State Resistance
42
55
Forward Transconductance
8.5
c
DYNAMIC CHARACTERISTICS
pF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
c
CISS
860
225
135
VDS=-15V,VGS=0V
f=1.0MHz
COSS
CRSS
SWITCHING CHARACTERISTICS
ns
ns
ns
ns
tD(ON)
15
18
Turn-On Delay Time
VDD=-15V
ID=-1A
t
r
Rise Time
VGS=-10V
RGEN=6 ohm
tD(OFF)
63
15
Turn-Off Delay Time
Fall Time
t
f
16.8
nC
VDS=-15V,ID=-6.0A,VGS=-10V
VDS=-15V,ID=-6.0A,VGS=-4.5V
Qg
Total Gate Charge
8.5
1.7
3.5
nC
nC
nC
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VDS=-15V,ID=-6.0A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuous Drain-Source Diode Forward Current
IS
A
V
-1.2
Diode Forward Voltage b
VGS=0V,IS=-1.2A
-0.76 -1.2
VSD
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
°
d.Starting TJ=25 C,VDD = 20V,VGS=10V,L=0.5mH.
Sep,17,2008
www.samhop.com.tw
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
