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HD6417750SBP200 参数 Datasheet PDF下载

HD6417750SBP200图片预览
型号: HD6417750SBP200
PDF下载: 下载PDF文件 查看货源
内容描述: 的SuperH RISC引擎 [SuperH RISC engine]
分类和应用: 外围集成电路时钟
文件页数/大小: 1039 页 / 6201 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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Burst Write: The timing chart for a burst write is shown in figure 13.30. In the SH7750 Series, a  
burst write occurs only in the event of cache copy-back or a 32-byte transfer by the DMAC. In a  
burst write operation, the WRITA command is issued in the Tc1 cycle following the Tr cycle in  
which the ACTV command is output. In the write cycle, the write data is output at the same time  
as the write command. In the case of the write with auto-precharge command, precharging of the  
relevant bank is performed in the synchronous DRAM after completion of the write command,  
and therefore no command can be issued for the same bank until precharging is completed.  
Consequently, in addition to the precharge wait cycle, Tpc, used in a read access, cycle Trwl is  
also added as a wait interval until precharging is started following the write command. Issuance of  
a new command for synchronous DRAM is postponed during this interval. The number of Trwl  
cycles can be specified by bits TRWL2–TRWL0 in MCR. 32-byte boundary data is written in  
wraparound mode. DACK is asserted two cycles before the data write cycle.  
Tr  
Trw  
Tc1  
Tc2  
Tc3  
Tc4  
Trw1  
Trw1  
Tpc  
CKIO  
Bank  
Row  
Precharge-sel  
Address  
Row  
Row  
H/L  
c1  
RD/  
DQMn  
D63–D0  
(read)  
c1  
c2  
c3  
c4  
CKE  
DACKn  
(SA: IO memory)  
Note: For DACKn, an example is shown where CHCRn.AL (access level) = 0 for the DMAC.  
Figure 13.30 Basic Timing for Synchronous DRAM Burst Write  
Rev. 6.0, 07/02, page 419 of 986  
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