欢迎访问ic37.com |
会员登录 免费注册
发布采购

HD6417750SBP200 参数 Datasheet PDF下载

HD6417750SBP200图片预览
型号: HD6417750SBP200
PDF下载: 下载PDF文件 查看货源
内容描述: 的SuperH RISC引擎 [SuperH RISC engine]
分类和应用: 外围集成电路时钟
文件页数/大小: 1039 页 / 6201 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号HD6417750SBP200的Datasheet PDF文件第466页浏览型号HD6417750SBP200的Datasheet PDF文件第467页浏览型号HD6417750SBP200的Datasheet PDF文件第468页浏览型号HD6417750SBP200的Datasheet PDF文件第469页浏览型号HD6417750SBP200的Datasheet PDF文件第471页浏览型号HD6417750SBP200的Datasheet PDF文件第472页浏览型号HD6417750SBP200的Datasheet PDF文件第473页浏览型号HD6417750SBP200的Datasheet PDF文件第474页  
Single Read: With the SH7750 Series, as synchronous DRAM is set to burst read/burst write  
mode, read data output continues after the required data has been read. To prevent data collisions,  
after the required data is read in Td1, empty read cycles Td2 to Td4 are performed, and the  
SH7750 Series waits for the end of the synchronous DRAM operation. The %6 signal is asserted  
only in Td1.  
When the data width is 64 bits, there are 4 burst transfers in a read. In cache-through and other  
DMA read cycles, of cycles Td1 to Td4, %6 is asserted and data latched only in the Td1 cycle.  
Since such empty cycles increase the memory access time, and tend to reduce program execution  
speed and DMA transfer speed, it is important both to avoid unnecessary cache-through area  
accesses, and to use a data structure that will allow data to be placed at a 32-byte boundary, and to  
be transferred in 32-byte units, when carrying out DMA transfer with synchronous DRAM  
specified as the source.  
Tr  
Trw  
Tc1  
Tc2  
Tc3 Tc4/Td1 Td2  
Td3  
Td4  
Tpc  
Tpc  
Tpc  
CKIO  
Bank  
Row  
Row  
Row  
Precharge-sel  
Address  
H/L  
c1  
RD/  
DQMn  
D63–D0  
(read)  
c1  
CKE  
DACKn  
(SA: IO memory)  
Note: For DACKn, an example is shown where CHCRn.AL (access level) = 0 for the DMAC.  
Figure 13.29 Basic Timing for Synchronous DRAM Single Read  
Rev. 6.0, 07/02, page 418 of 986  
 复制成功!