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HD6417750SBP200 参数 Datasheet PDF下载

HD6417750SBP200图片预览
型号: HD6417750SBP200
PDF下载: 下载PDF文件 查看货源
内容描述: 的SuperH RISC引擎 [SuperH RISC engine]
分类和应用: 外围集成电路时钟
文件页数/大小: 1039 页 / 6201 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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Td3  
Td4  
Tr  
Trw  
Tc1  
Tc2  
Tc3  
Tc4/Td1  
Td2  
CKIO  
Bank  
Row  
Row  
Precharge-sel  
Address  
H/L  
c0  
Row  
RD/  
DQMn  
D63–D0  
(read)  
d0  
d1  
d2  
d3  
CKE  
DACKn  
(SA: IO memory)  
Note: For DACKn, an example is shown where CHCRn.AL (access level) = 0 for the DMAC.  
Figure 13.28 Basic Timing for Synchronous DRAM Burst Read  
In a synchronous DRAM cycle, the %6 signal is asserted for one cycle at the start of the data  
transfer cycle corresponding to the READ or READA command. The order of access is as  
follows: in a fill operation in the event of a cache miss, 64-bit boundary data including the missed  
data is read first, then 16-byte boundary data including the missed data is read in wraparound  
mode. The remaining 16 bytes of the 32-byte boundary data are read by the READA command  
issued next.  
Rev. 6.0, 07/02, page 417 of 986  
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