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HD6417750SBP200 参数 Datasheet PDF下载

HD6417750SBP200图片预览
型号: HD6417750SBP200
PDF下载: 下载PDF文件 查看货源
内容描述: 的SuperH RISC引擎 [SuperH RISC engine]
分类和应用: 外围集成电路时钟
文件页数/大小: 1039 页 / 6201 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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512k × 16-bit × 2-bank  
synchronous DRAM  
SH7750 Series  
A11–A2  
CKIO  
CKE  
A9–A0  
CLK  
CKE  
RD/  
D31–D16  
DQM3  
DQM2  
I/O15–I/O0  
DQMU  
DQML  
A9–A0  
CLK  
CKE  
I/O15–I/O0  
DQMU  
DQML  
D15–D0  
DQM1  
DQM0  
Figure 13.27 Example of 32-Bit Data Width Synchronous DRAM Connection (Area 3)  
Address Multiplexing: Synchronous DRAM can be connected without external multiplexing  
circuitry in accordance with the address multiplex specification bits AMXEXT and AMX2–  
AMX0 in MCR. Table 13.16 shows the relationship between the address multiplex specification  
bits and the bits output at the address pins. See Appendix F, Synchronous DRAM Address  
Multiplexing Tables.  
Address pin output at A25–A18, A1, and A0 are undefined.  
When A0, the LSB of the synchronous DRAM address, is connected to the SH7750 Series, with a  
32-bit bus width it makes a longword address specification. Connection should therefore be made  
in this order: connect pin A0 of the synchronous DRAM to pin A2 of the SH7750, then connect  
pin A1 to pin A3.  
With a 64-bit bus width, the LSB makes a quadword address specification. Connection should  
therefore be made in this order: connect pin A0 of the synchronous DRAM to pin A3 of the  
SH7750, then connect pin A1 to pin A4.  
Rev. 6.0, 07/02, page 415 of 986  
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